Diamond Wire Saw (Precision Cutting)

Fine Carbon Steel Diamond Wire (34-60μm)

A cost-effective diamond wire suitable for cutting photovoltaic silicon wafers (210 mm/182 mm), semiconductor wafers and general hard, brittle materials. Featuring a high-carbon cold-drawn steel core and a three-layer composite coating, it is produced using a well-established process and is available with consistent supply. Offering a cost advantage whilst ensuring cutting quality, it is the mainstay product for routine slicing.

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Overview

Product overview

1. Base material: high-carbon steel (C ≥ 0.8 per cent); the busbar diameter corresponds to the finished wire diameter (e.g. a finished wire of φ35 μm corresponds to a busbar of approximately 30 μm). 2. Coating structure: Pre-plated nickel undercoat (0.8–1.5 μm) + diamond grit + thickened nickel-cobalt alloy layer (0.5–5 μm), total coating thickness 2.5–7.0 μm. 3. Diamond concentration: 110–210 grains/mm (customisable). 4. Typical applications: Cutting of monocrystalline and polycrystalline photovoltaic wafers, semiconductor wafers (8-inch and below), sapphire slices, etc. 5. Wire breakage rate: Standard photovoltaic applications ≤ 6 breaks per 1,000 km; thin-slicing ≤ 6 breaks per 1,000 km; semiconductors ≤ 0.03 breaks per 1,000 km (based on a stable process). 6. Cutting life: Photovoltaic wire saws 120–360 km per coil; semiconductors 80–120 km per coil.

Features

Key features and parameters

Technical specifications
Specification	Value
Excellent mechanical properties	tensile strength ≥ 3,000–4,500 MPa (higher for finer wires), breaking force ≥ 10 N (φ78 μm).
Precision tolerances	wire diameter tolerance ±0.6–1.0 μm, ovality ≤ 1.2 μm.
Low damage	Front-side chipping ≤ 3–5 μm, rear-side chipping ≤ 5–8 μm, damage layer ≤ 8–12 μm (for semiconductor applications).
Wide compatibility	Compatible with mainstream cutting equipment
Flexible customisation	Wire diameter, concentration and length are adjustable.

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Closed-Loop Carbon Steel Diamond Wire (0.33-0.78mm)

A closed-loop diamond wire specifically designed for cutting large or irregularly shaped materials such as stone blocks, honeycomb materials and building components. Featuring a high-strength carbon steel core reinforced by specialised welding and plating, it offers exceptional breaking strength and a long service life, making it suitable for heavy-duty applications such as quarrying and stone processing.

Extremely high load capacity: High breaking strength, suitable for cutting under high tension and with high feed rates.
Closed-loop design: No wear at the joints, smooth operation, and reduced risk of wire breakage.
High durability: Reinforced with a coating for a long service life, suitable for continuous operation.
Flexible customisation: Circumference can be customised to meet customer requirements, making it compatible with cutting equipment of various sizes.

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Medium-Coarse to Coarse Carbon Steel Diamond Wire (77-580μm)

Medium-coarse to coarse-diameter diamond wires specifically designed for cutting medium-to-thick, hard and brittle materials such as sapphire, ceramics, quartz, magnetic materials and stone. Featuring a high-carbon cold-drawn steel wire core and a three-layer composite plating process, these wires offer a wide range of diameters (77–580 μm) and high breaking strength, making them suitable for high-feed, high-load cutting conditions whilst balancing cutting efficiency with surface quality. Coarse wire specifications of 245 μm and above can be customised to meet diverse machining requirements.

1. High breaking strength: The thicker the wire diameter, the higher the breaking strength (φ78 μm ≥ 10 N → φ245 μm ≥ 50 N; for custom specifications of thicker wires, the breaking strength increases proportionally), ensuring the wire does not break during high-feed cutting.
2. Robust coating: Bond strength ≥ 30 MPa, coating hardness 450–580 HV, excellent wear resistance, suitable for continuous cutting under high loads.
3. Wide tolerance control: Wire diameter tolerance ranges from ±1.5–3.0 μm (77–200 μm) to ±3.0–5.0 μm (200–580 μm), with ovality ≤ 1.8 μm.
4. High versatility: Suitable for a wide range of hard and brittle materials; concentration and length can be flexibly adjusted.

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Ultra-Fine Tungsten Core Diamond Wire (24-32μm)

A high-end diamond wire specifically designed for cutting 8–12-inch semiconductor wafers, SiC, GaN and ultra-thin wafers of ≤75 μm. Featuring a tungsten or tungsten-lanthanum alloy core combined with a three-layer composite plating process, it offers extremely high tensile strength, an extremely low breakage rate and excellent cutting precision, meeting the requirements for semiconductor-grade high cleanliness and ultra-low damage.

Ultra-high strength: Tensile strength ≥ 3000–3200 MPa (tungsten alloys can reach ≥ 6000 MPa), ensuring no deformation during high-speed cutting.
Extremely low damage: Front-side chipping ≤ 2–3 μm, rear-side chipping ≤ 3–5 μm, damage layer ≤ 7–10 μm (depending on the material).
Precision tolerances: Wire diameter tolerance ±2.0 μm, ovality ≤ 1.0 μm
Long service life: Service life for semiconductor cutting ≥ 240 km per roll, with a yield rate 0.68%–2.35% higher than that of mainstream products.

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Technical Enquiry

Discuss Your Cutting or Production Requirement

Our engineering team provides free product selection support for precision wafer cutting and heavy-duty stone or concrete applications, with OEM / ODM customization available.

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Email: siying@shiyi-industrial.net
WhatsApp: +86 173 2112 4971
Phone: +86 133 1171 5971

Sample fees can be credited toward bulk orders meeting the standard MOQ. Our technical team will respond within 24 hours. About our technical service